A review of manufacturing technologies for silicon carbide superjunction devices

• 作者: Run Tian Chao Ma Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: REVIEWS
• 页码范围: 21-26
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/6/061801

摘要

Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numer-ous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.