Determination of trap density-of-states distribution of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

• 作者: Mahmoud Shaban
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: ARTICLES
• 页码范围: 51-57
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/6/062802

摘要

Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C∶H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial arc plasma de-position method.They were characterized by temperature-dependent capacitance-frequency measurements in the temperat-ure and frequency ranges of 300-400 K and 50 kHz-2 MHz,respectively.The energy distribution of trap density of states in the films was extracted using a simple technique utilizing the measured capacitance-frequency characteristics.In the measured tem-perature range,the energy-distributed traps exhibited Gaussian-distributed states with peak values lie in the range:2.84×1016-2.73×1017 eV-1 cm-3 and centered at energies of 120-233 meV below the conduction band.These states are generated due to a large amount of sp2-C and π-bond states,localized in GBs of the UNCD/a-C∶H film.The attained defect parameters are accommodating to understand basic electrical properties of UNCD/a-C∶H composite and can be adopted to suppress defects in the UNCD-based materials.