Raman scattering from highly-stressed anvil diamond

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（1）
• 页码范围: 460-465
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abc7a7

摘要

The high-frequency edge of the first-order Raman mode of diamond refl ects the stress state at the culet of anvil, and is often used for the pressure calibration in diamond anvil cell (DAC) experiments. Here we point out that the high-frequency edge of the diamond Raman phonon corresponds to the Brillouin zone (BZ) centerΓ point as a function of pressure. The diamond Raman pressure gauge relies on the stability of crystal lattice of diamond under high stress. Upon the diamond anvil occurs failure under the uniaxial stress (197 GPa), the loss of intensity of the first-order Raman phonon and a stress-dependent broad Raman band centered at 600 cm?1 are observed, which is associated with a strain-induced local mode corresponding to the BZ edge phonon of the L1 transverse acoustic phonon branch.