Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene)Field-effect Transistors

• 作者: Xiao-Lan Qiao Jie Yang Lian-He Han Ji-Dong Zhang Mei-Fang Zhu
• 来源期刊: 高分子科学（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: ARTICLES
• 页码范围: 849-855
• 页数: 7页
• 语种: 英文

摘要

Poly(3-hexylthiophene)(P3HT)thin films,obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP)before and after thermal annealing(TA),and the corresponding devices were prepared to unravel the microstructure-property relationship,which is of great importance for the development of organic electronics.When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm2·V-1·s-1 was achieved.This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors.The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra,grazing incident X-ray diffraction(GIXD),and atomic force microscopy(AFM).The impressive mobility was attributed to the high crystallinity and ordered molecule packing,which stem from the synergistic effects of SVASP and thermal annealing.