Hybrid material integration in silicon photonic integrated circuits

• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: REVIEWS
• 页码范围: 33-42
• 页数: 10页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/4/041303

摘要

Hybrid integration of Ⅲ-Ⅴ and ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of Ⅲ-V gain media with silicon PICs.Similar approaches are also being considered for ferroelectrics to enable larger RF modulation band-widths,higher linearity,lower optical loss integrated optical modulators on chip.In this paper,we review existing integration strategies of Ⅲ-Ⅴ materials and present a route towards hybrid integration of both Ⅲ-Ⅴ and ferroelectrics on the same chip.We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to ap-proaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybrid Ⅲ-V integra-tion with silicon PICs.Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse func-tionalities on silicon PICs.