Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

• 作者: Yuxin Liu Xuefan Niu Rencong Zhang Qinghua Zhang Jing Teng Yongqing Li
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 94-98
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/38/5/057303

摘要

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures,in which MnSe is an antiferromagnetic insulator,and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI).Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances.Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance,which exceeds 0.1e2/h at temperature T =1.6K and magnetic field μ0H =5T,even though only the top TI surface is in proximity to MnSe.This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.