High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film

• 作者: Yu-Song Zhi Wei-Yu Jiang Zeng Liu Yuan-Yuan Liu Xu-Long Chu Jia-Hang Liu Shan Li Zu-Yong Yan Yue-Hui Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 670-677
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/abe37a

摘要

Si-doped β-Ga2O3 films are fabricated through metal-organic chemical vapor deposition (MOCVD).Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200 μW·cm-2254 nm illumination and ±20 V bias,leading to photo-responsivity as high as 788 A·W-1.The Si-doped β-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.