Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

• 作者: Xiu Yan Wei-Li Zhen Shi-Rui Weng Ran-Ran Zhang Wen-Ka Zhu Li Pi Chang-Jin Zhang
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 99-103
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/38/5/057304

摘要

Atomically thin two-dimensional (2D) materials are the building bricks for next-generation electronics and opto-electronics,which demand plentiful functional properties in mechanics,transport,magnetism and photoresponse.For electronic devices,not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable.Layered structures composed of 2D materials of different properties can be del-icately designed as various useful heterojunction or homojunction devices,in which the designs on the same material (namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved.We demonstrate that the insulating pristine ZnPS3,a ternary transition-metal phosphorus trichalcogenide,can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms,respectively.The field-effect-transistor (FET) devices are pre-pared via an ultraviolet exposure lithography technique.The Co-ZnPS3 device exhibits an electrical conductivity of 8 × 104 S/m,which is comparable to the conductivity of graphene.The Cu-ZnPS3 FET reveals a current ON/OFF ratio of 105 and a mobility of 3 × 10-2 cm2.V-1·s-1.The realization of an insulator,a typical semicon-ductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.