Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

• 作者: Yao-Peng Zhao Chong Wang Xue-Feng Zheng Xiao-Hua Ma Ang Li Kai Liu Yun-Long He Xiao-Li Lu Yue Hao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 678-683
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd469

摘要

PbZr0.2Ti0.8O3 (PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition (PLD) in A1-GaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs).The ferroelectric effect of PZT A1GaN/GaN MIS-HEMT is demonstrated.The polarization charge in PZT varies with different gate voltages.The equivalent polarization charge model (EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas (2DEG).The threshold voltage (Vth) and output current density (IDs) can also be obtained by the EPCM.The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT.The polarization charges of PZT can be modulated by different gate-voltage stresses and the Vth has a regulation range of 4.0 V.The polarization charge changes after the stress of gate voltage for several seconds.When the gate voltage is stable or changes at high frequency,the output characteristics and the current collapse of the device remain stable.