Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 636-640
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/abb7f6

摘要

AlGaN/GaN high-electron-mobility transistors(HEMTs)with postpassivation plasma treatment are demonstrated and investigated for the first time.The results show that postpassivation plasma treatment can reduce the gate leakage and enhance the drain current.Comparing with the conventional devices,the gate leakage of AlGaN/GaN HEMTs with post-passivation plasma decreases greatly while the drain current increases.Capacitance-voltage measurement and frequency-dependent conductance method are used to study the surface and interface traps.The mechanism analysis indicates that the surface traps in the access region can be reduced by postpassivation plasma treatment and thus suppress the effect of virtual gate,which can explain the improvement of DC characteristics of devices.Moreover,the density and time constant of interface traps under the gate are extracted and analyzed.