Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 ℃

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 641-647
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abc0df

摘要

This paper presents the development of lateral depletion-mode n-channel 4H-SiC junction field-effect transistors(LJFETs)using double-mesa process toward high-temperature integrated circuit(IC)applications.At room temperature,the fabricated LJFETs show a drain-to-source saturation current of 23.03 μA/μm,which corresponds to a current density of 7678 A/cm2.The gate-to-source parasitic resistance of 17.56 kΩ ? μm is reduced to contribute only 13.49％of the on-resistance of 130.15 kΩ? μm,which helps to improve the transconductance up to 8.61 μS/μm.High temperature characteristics of LJFETs were performed from room temperature to 400 ℃.At temperatures up to 400 ℃ in air,it is observed that the fabricated LJFETs still show normally-on operating characteristics.The drain-to-source saturation current,transconductance and intrinsic gain at 400 ℃ are 7.47 μA/μm,2.35 μS/μm and 41.35,respectively.These results show significant improvement over state-of-the-art and make them attractive for high-temperature IC applications.