A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT technology

• 作者: Ahmed Wahba Lin Cheng Fujiang Lin
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: ARTICLES
• 页码范围: 47-59
• 页数: 13页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/7/072401

摘要

This paper presents the design and testing of a 15 Gbps non-return-to-zero (NRZ),30 Gbps 4-level pulse amplitude modulation (PAM4) configurable laser diode driver (LDD) implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ω resistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ω lasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback (DFB) lasers.The chip occupies a total area of 0.7 × 1.3 mm2.