Robust transport of charge carriers in in-plane 1T'-2H MoTe2 homojunctions with ohmic contact

• 作者: Donglin Lu Zhenqing Li Congsheng Xu Siwei Luo Chaoyu He Jun Li Gang Guo Guolin Hao Xiang Qi Jianxin Zhong
• 来源期刊: 纳米研究（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: Research Articles
• 页码范围: 1311-1318
• 页数: 8页
• 语种: 英文

摘要

Metal-semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices,and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts.Here,2D in-plane 1T'-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition.The interface properties of in-plane 1T'-2H MoTe2 homojunction were investigated in detail by combining experiments,calculations and theories.The ohmic contact properties of 1T'-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations.The charge carriers robust transport in in-plane 1T'-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment.These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.