Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes

• 作者: Qiao Wang Donglin Zhang Yulin Zhao Chao Liu Xiaoxin Xu Jianguo Yang Hangbing Lv
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: ARTICLES
• 页码范围: 63-68
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/8/082401

摘要

In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were pro-posed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlin-ear issue of the RRAM cells;(2)a two-stage offset-cancelled current sense amplifier(TSOCC-SA)with only two capacitors achieves a double sensing margin and a high tolerance of device mismatch.The simulation results in 28 nm CMOS technology show that the HRRG can provide a read reference that tracks PVT variations and solves the nonlinear issue of the RRAM cells.The proposed TSOCC-SA can tolerate over 64％device mismatch.