Concurrent Structural and Electronic Phase Transitions in V2O3 Thin Films with Sharp Resistivity Change

• 作者: Chuang Xie Ling Hu Ran-Ran Zhang Shun-Jin Zhu Min Zhu Ren-Huai Wei Xian-Wu Tang Wen-Hai Song Xue-Bin Zhu Yu-Ping Sun
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 118-127
• 页数: 10页
• 语种: 英文
• DOI: 10.1088/0256-307X/38/7/077103

摘要

The relationship between structural and electronic phase transitions in V2O3 thin films is of critical importance for understanding of the mechanism behind metal insulator transition (MIT) and related technological applications.Despite being extensively studied,there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far.Using V2O3 thin films grown on r-plane Al2O3 substrates,which exhibit abrupt MIT and structural phase transition,we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements.Our result provides experimental evidence for clarifying this issue,which could form the basis of theoretical studies as well as technological applications in V2O3.