Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small mole-cule CBP

• 作者: LIN Yuhan HUANG Ye ZHU Qianpeng ZHANG Genggeng HUJuntao
• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2021,（11）
• 所属期刊栏目: Devices
• 页码范围: 656-660
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11801-021-1028-z

摘要

The poor film formation of CdSe/ZnS quantum dots(QDs)during spin-coating makes a substantial impact on the de-vice performance of quantum dot light-emitting diodes(QLEDs).This work proposes a method to improve the mor-phology of the quantum dot light-emitting layer(EML)by adding small organic molecular 4,4'-Bis(9H-carbazol-9-yl)biphenyl(CBP)into the layer.Its surface roughness reduces from 6.21 nm to 2.71 nm,which guarantees a good con-tact between hole transport layer(HTL)and EML.Consequently,the CdSe/ZnS QDs:CBP based QLED achieves maximum external quantum efficiency(EQE)of 5.86％,and maximum brightness of 10 363 cd/m2.It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs.