Suppression of ferroresonance using passive memristor emulator

• 作者: S Poornima
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 760-768
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd7e0

摘要

Power system inherently consists of capacitance and inductance in its components.Equipment with saturable induc-tance and circuit capacitance provides circumstances of generating ferroresonance,resulting in overvoltage and overcurrent in the connected system.The effects of ferroresonance result in insulation failure and hence damage to the equipment is unavoidable.Though many devices are proposed for mitigating such circumstances,a promising technology of using mem-ristors may provide better performance than others in the future.A memristor emulator using the N-channel JFET J310 is used in this work.Unlike other electronic components that replicate memristor properties,the chosen memristor emulator is a passive device since it does not need any external power supply.Simulation and experimental results verify the design of a memristor emulator and the characteristics of an ideal memristor.Experimental results prove that the memristor emulator can suppress the fundamental ferroresonance induced in a prototype single phase transformer.The results of the harmonic analysis also validate the memristor performance against the conventional technique.