We design a 645 nm laser diode (LD) with a narrow vertical beam divergence angle based on the mode expansion layer.The vertical beam divergence of 10.94° at full width at half-maximum is realized under 1.5 A continuous-wave operation,which is the smallest vertical beam divergence for such an LD based on the mode expansion layer,to the best of our knowledge.The threshold current and output power are 1.07 A and 0.94 W,limited by the thermal rollover for the 100 μm wide and 1500 μm long broad area laser,and the slope efficiency is 0.71 W/A.The low coherence device is fabricated with the speckle contrast of 3.6% and good directional emission.Such 645 nm LDs have promising applications in laser display.