Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors

• 作者: Hao Zou Lin-An Yang Xiao-Hua Ma Yue Hao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: GENERAL
• 页码范围: 186-193
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd470

摘要

The effects of various notch structures on direct current(DC)and radio frequency(RF)performances of AlGaN/GaN high electron mobility transistors(HEMTs)are analyzed.The AlGaN/GaN HEMTs,each with a 0.8-pm gate length,50-pm gate width,and 3-pm source-drain distance in various notch structures at the AlGaN/GaN barrier layer,are manufactured to achieve the desired DC and RF characteristics.The maximum drain current(Ids.max),pinch-off voltage(Vth),maximum transconductance(gm),gate voltage swing(GVS),subthreshold current,gate leakage current,pulsed Ⅰ-Ⅴ characteristics,breakdown voltage,cut-off frequency(fT),and maximum oscillation frequency(fmax)are investigated.The results show that the double-notch structure HEMT has a 30％improvement of gate voltage swing,a 42.2％improvement of breakdown voltage,and a 9％improvement of cut-off frequency compared with the conventional HEMT.The notch structure also has a good suppression of the current collapse.