Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

• 作者: Rui Liu Yongli He Shanshan Jiang Li Zhu Chunsheng Chen Ying Zhu Qing Wan
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: SPECIAL TOPIC — Physics in neuromorphic devices
• 页码范围: 56-61
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abc163

摘要

Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromor-phic systems.Electric-double-layer (EDL) transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application.Here,artificial synapses based on indium-tungsten-oxide (IWO)-based EDL transistors are proposed,and some important synaptic functions (excitatory post-synaptic current,paired-pulse facilitation,filtering) are emulated.Two types of spike-timing-dependent plasticity (Hebbian STDP and anti-Hebbian STDP) learn-ing rules and multistore memory (sensory memory,short-term memory,and long-term memory) are also mimicked.At last,classical conditioning is successfully demonstrated.Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications.