Optical spectroscopy study of damage evolution in 6H-SiC by H2+ implantation

• 作者: Yong Wang Qing Liao Ming Liu Peng-Fei Zheng Xinyu Gao Zheng Jia Shuai Xu Bing-Sheng Li
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: SPECIAL TOPIC — Ion beam modification of materials and applications
• 页码范围: 83-89
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abe9a7

摘要

Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various tech-niques.One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization.In this work,confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV H2+ implantation and thermal treatment in the microstructure of 6H-SiC single crystal.The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asym-metry of Raman-scattering peaks.The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence.The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 ℃ to 1100 ℃.The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.