Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor

• 作者: Si-De Song Su-Zhen Wu Guo-Zhu Liu Wei Zhao Yin-Quan Wang Jian-Wei Wu Qi He
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 508-513
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abccba

摘要

The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(i)High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ii)A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(iii)The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.