Digital and analog memory devices based on 2D layered M PS3(M = Mn,Co,Ni)materials

• 作者: Guihua Zhao Li Wang Xi Ke Zhiyi Yu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 553-558
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd397

摘要

We demonstrate digital and analog devices with an Ag/MPS3/Au structure based on layered MPS3(M = Mn,Co,Ni)2D materials.All devices show the bipolar behavior of resistive switching.In addition,Ag/MnPS3/Au and Ag/NiPS3/Au devices show synaptic characteristics of potentiation and depression.The digital and analog characteristics of resistance states enable Ag/MPS3/Au devices to work as both binary memory and artificial synapse devices.The Ag/MPS3/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS3 materials.