Device physics and design of FD-SOIJLFET with step-gate-oxide structure to suppress GIDL effect

• 作者: Bin Wang Xin-Long Shi Yun-Feng Zhang Yi Chen Hui-Yong Hu Li-Ming Wang
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 565-570
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd2a2

摘要

A novel n-type junctionless field-effect transistor(JLFET)with a step-gate-oxide(SGO)structure is proposed to suppress the gate-induced drain leakage(GIDL)effect and off-state current Ioff.Introducing a 6-nm-thick tunnel-gate-oxide and maintaining 3-nm-thick control-gate-oxide,lateral band-to-band tunneling(L-BTBT)width is enlarged and its tunneling probability is reduced at the channel-drain surface,leading the off-state current Ioff to decrease finally.Also,the thicker tunnel-gate-oxide can reduce the influence on the total gate capacitance of JLFET,which could alleviate the capacitive load of the transistor in the circuit applications.Sentaurus simulation shows that Ioff of the new optimized JLFET reduced significantly with little impaction on its on-state current Ion and threshold voltage VTH becoming less,thus showing an improved Ion/Ioff ratio(5×104)and subthreshold swing(84 mV/dec),compared with the scenario of the normal JLFET.The influence of the thickness and length of SGO structure on the performance of JLFET are discussed in detail,which could provide useful instruction for the device design.