Experiments and SPICE simulations of double MgO-based perpendicular magnetic tunnel junction

• 作者: Qiuyang Li Penghe Zhang Haotian Li Lina Chen Kaiyuan Zhou Chunjie Yan Liyuan Li Yongbing Xu Weixin Zhang Bo Liu Hao Meng Ronghua Liu Youwei Du
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 590-598
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/abdea2

摘要

We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs)with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters from the tunneling magnetoresistance(TMR)vs.field loops and current-driven magnetization switching experiments.Based on the experimental results and device parameters,we further estimate current-driven switching performance of pMTJ including switching time and power,and their dependence on perpendicular magnetic anisotropy and damping constant of the free layer by SPICE-based circuit simulations.Our results show that the pMTJ cells exhibit a less than 1 ns switching time and write energies＜1.4 pJ;meanwhile the lower perpendicular magnetic anisotropy(PMA)and damping constant can further reduce the switching time at the studied range of damping constant α＜0.1.Additionally,our results demonstrate that the pMTJs with the thermal stability factor ≈ 73 can be easily transformed into spin-torque nano-oscillators from magnetic memory as microwave sources or detectors for telecommunication devices.