Design and simulation of AlN-based vertical Schottky barrier diodes

• 作者: Chun-Xu Su Wei Wen Wu-Xiong Fei Wei Mao Jia-Jie Chen Wei-Hang Zhang Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 599-604
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abe0c7

摘要

The key parameters of vertical A1N Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated.The specific on-resistance (Ron,sp) decreased to 0.5 mΩ· cm2 and the breakdown voltage (VBR) decreased from 3.4 kV to 1.1 kV by changing the DLC from 1015 cm-3 to 3 × 1016 cm-3.The VBR increases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ· cm2 by increasing DLT from 4-μm to 11-μm.The VBR enhancement results from the increase of depletion region extension.The Baliga's figure of merit (BFOM) of 3.8 GW/cm2 was obtained in the structure of 11-μm DLT and 1016 cm-3 DLC without FP.When DLT or DLC is variable,the consideration of the value of BFOM is essential.In this paper,we also present the vertical A1N SBD with a field plate(FP),which decreases the crowding of electric field in electrode edge.All the key parameters were optimized by simulating based on Silvaco-ATLAS.