Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films

• 作者: Qi-Xun Guo Zhong-Xu Ren Yi-Ya Huang Zhi-Chao Zheng Xue-Min Wang Wei He Zhen-Dong Zhu Jiao Teng
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 611-616
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abee6c

摘要

A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale.Here,we present a simple,scalable method based on magnetron sputtering to obtain high-quality Bi2Te3 films with the cartier density down to 4.0 × 1013 cm-2.In contrast to the most-used method of high substrate temperature growth,we firstly sputtered Bi2Te3 thin films at room temperature and then applied post-annealing.It enables the growth of highly-oriented Bi2Te3 thin films with larger grain size and smoother interface.The results of electrical transport show that it has a lower carrier density as well as a larger coherent length (～ 228 nm,2 K).Our studies pave the way toward large-scale,cost-effective production of Bi2Te3 thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.