Modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 514-519
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abc0dd

摘要

With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a ZnO layer as a transition layer.The simulations show that the device still has good properties after adding this layer.