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摘要:
Narrow band mid-infrared (MIR) absorption is highly desired in thermal emitter and sensing applications.We theo-retically demonstrate that the perfect absorption at infrared frequencies can be achieved and controlled around the surface phonon resonance frequency of silicon carbide (SiC).The photonic heterostructure is composed of a distributed Bragg reflector (DBR)/germanium (Ge) cavity/SiC on top of a Ge substrate.Full-wave simulation results illustrate that the Tamm phonon-polaritons electric field can locally concentrate between the Ge cavity and the SiC film,contributed to the improved light-phonon interactions with an enhancement of light absorption.The structure has planar geometry and does not require nano-patteming to achieve perfect absorption of both polarizations of the incident light in a wide range of incident angles.Their absorption lines are tunable via engineering of the photon band-structure of the dielectric photonic nanostructures to achieve reversal of the geometrical phase across the interface with the plasmonic absorber.
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篇名 Omnidirectional and compact Tamm phonon-polaritons enhanced mid-infrared absorber
来源期刊 中国物理B(英文版) 学科
关键词
年,卷(期) 2021,(8) 所属期刊栏目 ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS
研究方向 页码范围 407-411
页数 5页 分类号
字数 语种 英文
DOI 10.1088/1674-1056/abe22b
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中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
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