Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4

• 作者: Kaiyao Zhou Jun Deng Long Chen Wei Xia Yanfeng Guo Yang Yang Jian-Gang Guo Liwei Guo
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 519-525
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/ac068f

摘要

Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics,memories,and spintronics.The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy,which is suitable for preparing a few layers counterpart to explore novel properties.Here,prop-erties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated.It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV.The carrier mobility measured at 100 K is about 213 cm2.V-1.s-1 in bulk Nb2SiTe4,higher than the reported results.In a thin flake Nb2SiTe4,the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K,indicating that there exists a large anisotropic transport behavior in their basal plane.These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications.