Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure

• 作者: Ruo-Han Li Wu-Xiong Fei Rui Tang Zhao-Xi Wu Chao Duan Tao Zhang Dan Zhu Wei-Hang Zhang Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 547-552
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/ac0793

摘要

The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is inves-tigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ1,p,polarization charge density σb,and equivalent unite capacitance Coc.It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage Vth,and threshold voltage |Vth|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |Vth|.Additionally,the parameter influ-encing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5 × 1016 cm-3 at VGS =-12 V and VDS =-10 V.