Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors

• 作者: Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 525-531
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abf644

摘要

The effects of dry O2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper.The results show interface trap density (Dit) of SiC/SiO2 stacks,leakage current density (Jg),and time-dependent dielectric breakdown (TDDB) characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO2 interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.