Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

• 作者: Yi-Dong Yuan Dong-Yan Zhao Yan-Rong Cao Yu-Bo Wang Jin Shao Yan-Ning Chen Wen-Long He Jian Du Min Wang Ye-Ling Peng Hong-Tao Zhang Zhen Fu Chen Ren Fang Liu Long-Tao Zhang Yang Zhao Ling Lv Yi-Qiang Zhao Xue-Feng Zheng Zhi-Mei Zhou Yong Wan Xiao-Hua Ma
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 544-550
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abe117

摘要

The performance degradation of gate-recessed metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) is compared with that of conventional high electron mobility transistor (HEMT) under direct current (DC) stress,and the degradation mechanism is studied.Under the channel hot electron injection stress,the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer,and that under the gate dielectric of the device.The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress,which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel.However,because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel,the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT.The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.