Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology

• 作者: Shuang Sun Jian-Huan Wang Bao-Tong Zhang Xiao-Kang Li Qi-Feng Cai Xia An Xiao-Yan Xu Jian-Jun Zhang Ming Li
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（7）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 674-678
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/abf63f

摘要

A high quality epitaxial Si layer by molecular beam epitaxy (MBE) on Si (001) substrates was demonstrated to fabricate a channel with low density defects for high-performance FinFET technology.In order to study the effects of fin width and crystallography orientation on the MBE behavior,a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of <100> and <110>.The result shows that a defect-free Si film was obtained on the fin by MBE,since the etching damage was confined in the bottom of the epitaxial layer.In addition,the vertical growth of the epitaxial Si layer was observed on sub-10 nm <100> Si fins,and this was explained by a kinetic mechanism.