Achieving high-performance multilayer MoSe2 photodetectors by defect engineering

• 作者: Jintao Hong Fengyuan Zhang Zheng Liu Jie Jiang Zhangting Wu Peng Zheng Hui Zheng Liang Zheng Dexuan Huo Zhenhua Ni Yang Zhang
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 591-597
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abea8b

摘要

Optoelectronic properties of MoSe2 are modulated by controlled annealing in air.Characterizations by Raman spec-troscopy and XPS demonstrate the introduction of oxygen defects.Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport.Furthermore,the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing.The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance.Furthermore,the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3 × 104 A/W.