Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor

• 作者: Jian Gou Bingyu Xia Xuguang Wang Peng Cheng Andrew Thye Shen Wee Wenhui Duan Yong Xu Kehui Wu Lan Chen
• 来源期刊: 国家科学评论（英文版）
• 年，卷（期）: 2022,（2）
• 所属期刊栏目: RESEARCH ARTICLES
• 页码范围: 58-64
• 页数: 7页
• 语种: 英文

摘要

Creating and manipulating multiple charge states of solitary defects in semiconductors is of essential importance for solitary defect electronics,but is fundamentally limited by Coulomb's law.Achieving this objective is challenging,due to the conflicting requirements of the localization necessary for the sizable band gap and delocalization necessary for a low charging energy.Here,using scanning tunneling microscopy/spectroscopy experiments and first-principles calculations,we realized exotic quinary charge states of solitary defects in two-dimensional intermetallic semiconductor Sn2Bi.We also observed an ultralow defect charging energy that increases sublinearly with charge number rather than displaying the usual quadratic behavior.Our work suggests a promising route for constructing multiple defect-charge states by designing intermetallic semiconductors,and opens new opportunities for developing quantum devices with charge-based quantum states.