A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode

• 作者: Jing Yang Degang Zhao Zongshun Liu Feng Liang Ping Chen Lihong Duan Hai Wang Yongsheng Shi
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: SHORT COMMUNICATION
• 页码范围: 19-21
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/010501

摘要

Ultraviolet (UV) and deep-UV light emitters are prom-ising for various applications including bioagent detection,wa-ter and air purification,dermatology,high-density optical stor-age,and lithography.