High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

• 作者: K.S.Zhuravlev A.L.Chizh K.B.Mikitchuk A.M.Gilinsky I.B.Chistokhin N.A.Valisheva D.V.Dmitriev A.I.Toropov M.S.Aksenov
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 63-67
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/012302

摘要

The design,manufacturing and DC and microwave characterization of high-power Schottky barrier InAIAs/InGaAs back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameters operate at≥40 and 28 GHz,respectively,have the output RF power as high as 58 mW at a frequency of 20 GHz,the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness,and a photodiode dark current as low as 0.04 nA.We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.