Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

• 作者: R.Rahaman M.Sharmin J.Podder
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 79-88
• 页数: 10页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/012801

摘要

Here we discuss the synthesis of copper (Ⅱ) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at％ Mn using the spray pyrolysis technique.As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at％ Mn doping.Energy dispersive analysis of X-rays confirmed the chemical composi-tion of the films.X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the (111)peak.Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67-2.90 eV and 0.11-1.73 eV,respectively.Refractive index and static dielectric constants were computed from the optical spectra.Electrical resistivity of CuO and Mn-doped CuO (Mn∶CuO) thin films was found in the range from 10.5 to 28.6 Ω.cm.The tiniest electron effective mass was calculated for 4 at％ Mn:CuO thin films.P to n-type transition was observed for 4 at％ Mn doping in CuO films.Carrier con-centration and mobility were found in the orders of 1017 cm-3 and 10-1 cm2/(V.s),respectively.The Hall coefficient was found to be between 9.9 and 29.8 cm3/C.The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.