Frequency dependence on polarization switching measurement in ferroelectric capacitors

• 作者: Zhaomeng Gao Shuxian Lyu Hangbing Lyu
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 99-103
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/014102

摘要

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization (Pr) and coercive field (Ec).In this study,positive-up-negative-down (PUND) measurement under a wide fre-quency range was performed on a 10-nm thick Hf0.sZr0.sO2 ferroelectric film.Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor.After considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time.In such a method,rational P-Vloops measured at high frequencies (＞1 MHz) was successfully achieved.This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.