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摘要:
The first atmospheric window of 3-5 μm in the mid-infrared(MIR)spectral range pertains to crucial appli-cation fields,with particular scientific and technological importance.However,conventional narrow-bandgap semiconductors operating at this band,represented by mercury cadmium telluride and indium antimonide,suffer from limited specific detectivity at room temperature and hindered optoelectronic integration.In this study,a plasmonic hot electron-empowered MIR photodetector based on Al-doped ZnO(AZO)/bi-layer graphene het-erostructure is demonstrated.Free electrons oscillate coherently in AZO disk arrays,resulting in strong localized surface plasmon resonance(LSPR)in the MIR region.The photoelectric conversion efficiency at 3-5 μm is sig-nificantly improved due to plasmon-induced hot-electron extraction and LSPR-enhanced light absorption.The specific detectivity reaches about 1.4×1011 Jones and responsivity is up to 4712.3 A/W at wavelength of 3 μm at room temperature.The device's specific detectivity is among the highest performance of commercial state-of-the-art photodetectors and superior to most of the other 2D materials based photodetectors in the MIR region.These results demonstrate that a plasmonic heavily doped metal oxides/2D material heterostructure is a suitable architecture for constructing highly sensitive room-temperature MIR photodetectors.
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篇名 Highly Sensitive Mid-Infrared Photodetector Enabled by Plasmonic Hot Carriers in the First Atmospheric Window
来源期刊 中国物理快报(英文版) 学科
关键词
年,卷(期) 2022,(5) 所属期刊栏目 CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
研究方向 页码范围 186-193
页数 8页 分类号
字数 语种 英文
DOI 10.1088/0256-307X/39/5/058501
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中国物理快报(英文版)
月刊
0256-307X
11-1959/O4
16开
北京中关村中国科学院物理研究所内
1984
eng
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14318
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