Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography

• 作者: Luying Li Yongfa Cheng Zunyu Liu Shuwen Yan Li Li Jianbo Wang Lei Zhang Yihua Gao
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（4）
• 所属期刊栏目: REVIEWS
• 页码范围: 39-48
• 页数: 10页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/4/041103

摘要

As the scaling down of semiconductor devices,it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale.In this review,the quantitative characterization technique off-axis elec-tron holography is introduced in details,followed by its applications in various semiconductor nanomaterials including groupⅣ,compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli.The advant-ages and disadvantages of off-axis electron holography in material analysis are discussed,the challenges facing in-situ elec-tron holographic study of semiconductor devices at working conditions are presented,and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.