Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

• 作者: Wensi Cai Haiyun Li Mengchao Li Zhigang Zang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（3）
• 所属期刊栏目: ARTICLES
• 页码范围: 95-102
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/3/034102

摘要

Solution-processed oxide semiconductors have been considered as a potential alternative to vacuum-based ones in printable electronics.However,despite spin-coated InZnO(IZO)thin-film transistors(TFTs)have shown a relatively high mobil-ity,the lack of carrier suppressor and the high sensitivity to oxygen and water molecules in ambient air make them potentially suffer issues of poor stability.In this work,Al is used as the third cation doping element to study the effects on the electrical,op-toelectronic,and physical properties of IZO TFTs.A hydrophobic self-assembled monolayer called octadecyltrimethoxysilane is introduced as the surface passivation layer,aiming to reduce the effects from air and understand the importance of top sur-face conditions in solution-processed,ultra-thin oxide TFTs.Owing to the reduced trap states within the film and at the top sur-face enabled by the doping and passivation,the optimized TFTs show an increased current on/off ratio,a reduced drain cur-rent hysteresis,and a significantly enhanced bias stress stability,compared with the untreated ones.By combining with high-capacitance AlOx,TFTs with a low operating voltage of 1.5 V,a current on/off ratio of＞104 and a mobility of 4.6 cm2/(V·s)are demonstrated,suggesting the promising features for future low-cost,low-power electronics.