Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

• 作者: Zhuang-Zhuang Zhao Meng Xun Guan-Zhong Pan Yun Sun Jing-Tao Zhou De-Xin Wu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2022,（3）
• 所属期刊栏目: ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS
• 页码范围: 336-342
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/ac16d0

摘要

The 808-nm vertical cavity surface emitting laser(VCSEL)with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quan-tum wells is designed and fabricated.Compared with the VCSELs with Al0.05Ga0.95As/Al0.3Ga0.7As quantum wells,the VCSEL with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quantum wells is demonstrated to possess higher power conver-sion efficiency(PCE)and better temperature stability.The maximum PCE of 43.8％for 10-μm VCSEL is achieved at an ambient temperature of 30℃.The size-dependent thermal characteristics are also analyzed by characterizing the spec-tral power and output power.It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.