Radiation effects of 50-MeV protons on PNP bipolar junction transistors

• 作者: Yuan-Ting Huang Xiu-Hai Cui Jian-Qun Yang Tao Ying Xue-Qiang Yu Lei Dong Wei-Qi Li Xing-Ji Li
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2022,（2）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 738-743
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/ac1331

摘要

The effects of radiation on 3CG 110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons,40-MeV Si ions,and 1-MeV electrons.In this paper,electrical characteristics and deep level transient spectroscopy (DLTS)are utilized to analyze radiation defects induced by ionization and displacement damage.The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons.Moreover,by comparing the types of damage caused by different radiation sources,the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs,in contrast to 40-MeV Si ions,which mainly generate displacement defects,and 1-MeV electrons,which mainly produce ionization defects.This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.