【正】 Y2000-62135-149 0020140采用高密度等离子体化学汽相淀积氧化物电介质的窄铝金属化过程中感应金属空隙形成机制=A mecha-nism of stress-indueed metaI void in narrow Aluminum-brised metallization with the HDP CVD oxide dielectric[会,英]/Lee,S.G.& Oh,H.-S.//1999 IEEE Pro-ceedirigs of Internationai Interconnect Technology Con-ference.-149~151(EC)