New type X—ray mask fabricated using inductvely coupled plasma deepetching

• 作者: C.Li D.Chen D.Zhang F.Yi H.Mao S.Wang W.Lei X.Guo
• 来源期刊: 北京同步辐射装置：英文版
• 学科: 工学
• 关键词: 掩膜 X射线 等离子体刻蚀 微加工
• 年，卷（期）: 2001,（2）
• 页码范围: 100-103
• 页数: 0页
• 分类号: TN405.982

摘要

The fabrication of X-ray masks is a critical and challenging process in LIGA technique.As inductively coupled plasma(ICP) deepetching appears to be the most suitable source for deep silicon etching,we fabricated a new type X-ray mask using this technique.In comparison with other types of X-ray masks,the mask we fabricated has the advantages of its low cost and its simple fabrication process.Besired microstructures have also been fabricated using this new type X-ray mask in LIGA technique.