Photoluminescence Study of He ／Ar Ion Implanted Sapphire

• 作者: SongYin ZhangChonghong
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 物理学
• 关键词: 光激发光 兰宝石 气态离子 单晶体 激发态
• 年，卷（期）: 2003,（1）
• 页码范围: 72
• 页数: 1页
• 分类号: O432.12

摘要

In the present work the photoluminescence character of sapphire implanted with inert gas ions was studied. Sapphire single crystals were implanted with 120keV He or Ar ion at 600 K to fluences ranging from 5×10^16 to 2×10^17 ions/cm^2. PL spectra in pristine and ion-implanted specimens were measured using 340nm excitation. PL peak at 370 nm and 440 nm is observed. From the PL spectra obtained from He-implanted specimens (Fig.l), a blue-violet PL band with a maximum at about 440 nm was created in the No.1 sample of 5×10^16 ions/cm^2, this spectrum depends strongly on the fluence of He^+ ions. At higher dose, with increasing the concentration of helium, the PL peak is nearly pristine. From Fig.2, it is clearly seen that the PL peak intensity increases with implantation time as in No.3 sample. We think the PL peak at 440 nm was induced by the formation of He bubbles and point defects. From Fig.1 to Fig.2 their character expression was the same, but their photoluminescence mechanism was regarded to be different.