Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

• 作者: 周建军 张岚 徐轩 李亮 李哲洋 李忠辉 李赟 董逊 许晓军 韩春林
• 来源期刊: 中国物理快报(英文版)
• 学科: 工学
• 关键词: 纳米氮化铝 异质结构 氮化镓 性能影响 化学气相沉积法 二维电子气 层间 设备制造技术
• 年，卷（期）: 2010,（3）
• 页码范围: 251-253
• 页数: 3页
• 分类号: TN304.2 TQ133.1
• 语种: 英文

摘要

InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas (2DEG) mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84*1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.