EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities

• 作者: Andrei A Kudryavtsev Anna M Malyarenko Dmitrii S. Gets Edward Yu Danilovsky Leonid E Klyachkin Nikolay T Bagraev Roman V. Kuzmin Vladimir A. Mashkov Vladimir V Romanov Wolfgang Gehlhoff
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: Silicon MICROCAVITY Quantum Well ESR Bound EXCITON Trigonal CENTERS Single CENTERS Carbon ODMR
• 年，卷（期）: xdwlyw_2011,（6）
• 页码范围: 544-558
• 页数: 15页
• 分类号: R73

摘要

We present the first findings of the new electrically- and optically-detected magnetic resonance technique [ED electron spin resonance (EDESR) and (ODMR)] which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without the application of the external cavity as well as a high frequency source and recorder, with measuring the only magnetoresistance (EDESR) and transmission (ODMR) spectra within frameworks of the excitonic normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes respectively between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.